general description the MAX2307 is an integrated rf upconverter-driver optimized for the japanese cellular frequency band. it can also be used for applications in the us cellular and ism bands. its low current consumption (15ma at -15dbm output) extends the average talk time. the image rejection is done using only two external inductors at the upconverter output because the image frequency in japanese cellular phones is typically 330mhz away. this realizes the image rejection with no current consumption penalty and only two inexpensive off-chip components, saving cost and valuable board space. the MAX2307 has a separate shutdown control for the lo buffer to minimize vco pulling. it comes in an ultra- small 3 ? 4 ultra-chipscale package (ucsp). applications cellular handsets cdmaone handsets ism band features ultra-small implementation size low off-chip component count 15ma at -15dbm p out 34ma at +6.5dbm p out and -53dbc acpr <1a shutdown mode separate shutdown for lo buffer no external logic interface circuitry required MAX2307 low-power cellular upconverter-driver ________________________________________________________________ maxim integrated products 1 top view (bumps on bottom) a b c 1234 vcc vcc mixp vcc mixm gnd rfout gnd ifinp ifinm shdn loin/ shdnlo gc pin configuration 19-1897 rev 0; 1/01 evaluation kit manual follows data sheet ordering information part temp. range pin-package MAX2307ebc -40 c to +85 c3 4 ucsp for price, delivery, and to place orders, please contact maxim distribution at 1-888-629-4642, or visit maxim? website at www.maxim-ic.com. block diagram v cc v cc vccmixp a2 a3 vccmixm b1 ifinm ifinp c3 c2 c4 b3 b4 rfout gc shdn shdnlo loin/ shdnlo loin bias ctrl2 bias ctrl cdmaone is a trademark of cdma development group.
MAX2307 low-power cellular upconverter-driver 2 _______________________________________________________________________________________ absolute maximum ratings dc electrical characteristics (v cc = +2.8v to +4.2v, t a = -40 c to +85 c, no rf/if signals applied, v shdn = v shdnlo = +1.8v. typical values are at v cc = +3.0v, t a = +25 c, unless otherwise noted). stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v cc , rfout to gnd .............................................-0.3v to +5.5v shdn to gnd.............................................-0.3v to (v cc + 0.3v) rf, if input power ..............................................................0dbm continuous power dissipation (t a = +70 c) 3 ? 4 ucsp (derate 80mw/ c above +70 c) .................628mw operating temperature range ...........................-40 c to +85 c junction temperature ......................................................+150 c storage temperature range .............................-65 c to +160 c parameter symbol conditions min typ max units supply voltage v cc 2.8 4.2 v shutdown supply current i cc shdn = shdnlo = 0.6v 0.1 20 a standby supply current i cc shdn = 0.6v, shdnlo = 1.8v 2.5 4 ma v gc = 2.2v, p out = +6.5dbm 33.5 42 v gc = 2.2v, p out = +2dbm 29.5 38 supply current (note 1) i cc v gc = 0.5v 14 20 ma s upp l y c ur rent w i th n o rf dr i ve i cc v gc = 2.2v 28 36.5 ma gain control voltage v gc 0 3.0 v shdn , shdnlo logic high 1.8 v shdn , shdnlo logic low 0 0.6 v shdn , shdnlo logic current high 1a shdn , shdnlo logic current low 1a
MAX2307 low-power cellular upconverter-driver _______________________________________________________________________________________ 3 ac electrical characteristics (MAX2307 evaluation kit, v cc = +2.8v to +4.2v, t a = -40 c to +85 c, f rf = 887mhz to 925mhz, f lo = 722mhz to 760mhz, f if = 165mhz, p ifin = -20dbm, p loin = -15dbm, v shdn = v shdnlo = +1.8v, 50 ? system. typical values are at v cc = 3.0v, v shdn = v shdnlo = 1.8v, f rf = 906mhz, t a = +25 c, unless otherwise noted.) (note 1) parameter symbol conditions min typ max units rf frequency range (note 2) 887 925 mhz v gc = 2.2v, v cc = 3.0v, t a = +25 c 21.5 24.5 27.5 power gain g v gc = 2.2v, v cc = 2.8v to 4.2v, t a = t min to t max 17 24.5 32.5 db output power p out v gc = 2.2v, acpr -53dbc, alt -65dbc 4.5 6.5 dbm lo input power level -15 -12 -5 dbm gain control range v gc = 0.5v to 2.2v, p ifin = -30dbm 18 23 db gain control slope (note 3) v gc = 0.5v to 2.2v, p ifin = -30dbm 32 36 db/v adjacent channel power ratio acpr1 offset = 885khz in 30khz bw -53 dbc alternate channel power ratio acpr2 offset = 1.98mhz in 30khz bw -65 dbc p out = 6.5dbm -134 -131 rx band noise power (note 4) p noise p ifin = -50dbm, v gc = 0.5v -147 dbm/hz lo leakage p out from +6.5dbm to -8dbm -43 -30 dbc image leakage (note 1) p out from 6.5dbm to -8dbm, f rf = 887mhz to 925mhz, f image = 557mhz to 595mhz -40 -25 dbc note 1: minimum and maximum limits are guaranteed by design and characterization. note 2: see typical operating characteristics for operation outside this frequency range. note 3: slope measured with v gc = +0.5v and v gc = +0.8v. note 4: f rf = 925mhz, noise measured at 870mhz.
MAX2307 low-power cellular upconverter-driver 4 _______________________________________________________________________________________ typical operating characteristics (MAX2307 evaluation kit, v cc = +2.8v, v gc = 2.2v, v shdn = v shdnlo = v cc , f rf = 906mhz, f if = 165mhz, f lo = 741mhz, t a = +25 c, unless otherwise noted.) 0.3 0.5 0.4 0.7 0.6 0.8 0.9 24 356 shutdown supply current vs. supply voltage MAX2307 toc01 v cc (v) shutdown supply current ( a) t a = +25 c t a = +85 c t a = -40 c no rf signals applied v gc = 0 24 27 26 25 28 29 30 31 32 33 34 -10 -6 -8 -4 -2 0 6 total supply current vs. output power MAX2307 toc02 p out (dbm) total supply current (ma) 24 t a = -40 c t a = +25 c t a = +85 c v gc = 2.2v 10 16 13 22 19 28 25 31 0 1.0 1.5 0.5 2.0 2.5 3.0 total supply current vs. gain control voltage MAX2307 toc03 v gc (v) total supply current (ma) no rf signals applied t a = +25 c t a = +85 c t a = -40 c 10 15 25 20 30 35 840 880 860 900 920 940 960 conversion gain vs. rf frequency MAX2307 toc04 rf frequency (mhz) conversion gain (db) p ifin = -30dbm t a = +25 c t a = +85 c t a = -40 c 17 20 19 18 21 22 23 24 25 26 27 840 880 860 900 920 940 960 conversion gain vs. rf frequency MAX2307 toc05 rf frequency (mhz) conversion gain (db) p ifin = -30dbm v cc = +4.2v v cc = +2.8v v cc = +3.3v -30 -10 -20 10 0 30 20 40 0 1.0 1.5 0.5 2.0 2.5 3.0 conversion gain vs. gain control voltage MAX2307 toc06 v gc (v) conversion gain (db) t a = +25 c t a = +85 c t a = -40 c p ifin = -30dbm 15 21 18 27 24 33 30 -17 -13 -11 -15 -9 -7 -5 conversion gain vs. lo input power MAX2307 toc07 p loin (dbm) conversion gain (db) t a = -40 c t a = +25 c t a = +85 c p ifin = -30dbm 6.4 6.7 6.5 6.9 6.8 7.0 7.1 885 905 895 915 925 output power vs. rf frequency MAX2307 toc08 rf frequency (mhz) p out (dbm) acpr -53dbc alt1 -65dbc 6.6
MAX2307 low-power cellular upconverter-driver _______________________________________________________________________________________ 5 -100 -90 -80 -70 -60 -50 -40 -30 -20 -8 -5 -2 1 4 7 acpr and alt vs. output power MAX2307 toc10 p out (dbm) acpr and alt1 (dbc) acpr: a. t a = +85 c b. t a = +25 c c. t a = -40 c alt1: d. t a = +85 c e. t a = +25 c f. t a = -40 c varying p ifin , v gc = +2.2v b a d c e f -137.0 -136.0 -136.5 -135.0 -135.5 -134.0 -134.5 -133.5 880 900 890 910 920 930 rx band noise power vs. rf frequency MAX2307 toc12 f rf (mhz) rx band noise power (dbm/hz) t a = +25 c t a = +85 c t a = -40 c -155 -150 -140 -145 -135 -130 -40 -30 -50 -20 -10 0 10 rx band noise power vs. output power MAX2307 toc13 p out (dbm) rx band noise power (dbm/hz) t a = -40 c t a = +85 c t a = +25 c -80 -60 -70 -40 -50 -20 -30 -10 -10 -4.5 1.0 6.5 lo leakage vs. output power MAX2307 toc14 p out (dbm) lo leakage (dbc) f rf = 906mhz f rf = 887mhz f rf = 925mhz -80 -60 -70 -40 -50 -20 -30 -10 -10 -4.5 1.0 6.5 lo leakage vs. output power MAX2307 toc15 p out (dbm) lo leakage (dbc) t a = +25 c a = p loin = -17dbm b = p loin = -11dbm c = p loin = -5dbm c a b -80 -60 -70 -40 -50 -20 -30 -10 -10 -4.5 1.0 6.5 lo leakage vs. output power MAX2307 toc16 p out (dbm) lo leakage (dbc) t a = +85 c a = p loin = -17dbm b = p loin = -11dbm c = p loin = -5dbm c a b -80 -60 -70 -40 -50 -20 -30 -10 -10 -4.5 1.0 6.5 lo leakage vs. output power MAX2307 toc17 p out (dbm) lo leakage (dbc) t a = -40 c a = p loin = -17dbm b = p loin = -11dbm c = p loin = -5dbm c a b -50 -47 -48 -49 -46 -45 -44 -43 -42 -41 -40 885 895 905 915 925 image leakage vs. rf frequency MAX2307 toc18 rf frequency (mhz) image suppression (dbc) t a = +25 c t a = +85 c t a = -40 c typical operating characteristics (continued) (MAX2307 evaluation kit, v cc = +2.8v, v gc = 2.2v, v shdn = v shdnlo = v cc , f rf = 906mhz, f if = 165mhz, f lo = 741mhz, t a = +25 c, unless otherwise noted.)
MAX2307 low-power cellular upconverter-driver 6 _______________________________________________________________________________________ pin description pin name function a1 vcc supply pin. bypass with 100pf and 0.01f capacitors as close to the pin as possible. a2, a3 vccmixp, vccmixm mixer supply pins. require pullup inductors, which are used as part of the image rejection filter network. supply to inductors should be locally bypassed with 100pf and 0.01f capacitors. b1 loin/ shdnlo lo input and lo buffer shutdown. apply both lo input signal and lo buffer shutdown control to this pin. the lo path requires a dc-blocking capacitor. a logic high on shdnlo turns on the lo buffer, and a logic low turns off the lo buffer, independently of shdn . the shutdown control requires a 10k ? isolation resistor in order not to load the lo signal. b3 gc gain control pin. apply a voltage between 0 to 3v to vary the gain of the ic. b4 rfout pa driver output. requires an inductor pullup and a dc-blocking capacitor. these components are also the matching elements. a4, c1 gnd gnd connection. solder directly to the pcb ground plane, with three ground vias around the corner of the ucsp, as close to bump as possible. it is imperative that gnd sees a low inductance to the system ground plane. see the MAX2307 ev kit as an example. c2, c3 ifinp, ifinm upconverter if inputs. ac-couple if signals to these pins. c4 shdn shutdown control. high turns on the device except the lo buffer, low turns off the device except the lo buffer. 20 25 30 35 40 45 600 700 750 650 800 850 900 950 1000 s 11 of lo input MAX2307 toc19 f lo (mhz) real impedance ( ? ) -60 -55 -50 -45 -40 -35 imaginary impedance ( ? ) c, e, g d, f a r h shdn = shdnlo = v cc a = real, b = imaginary shdn = shdnlo = gnd c = real, d = imaginary shdn = v cc , shdnlo = gnd e = real, f = imaginary shdn = gnd, shdnlo = v cc g = real, h = imaginary -20 -15 -10 -5 0 5 10 15 20 0.5 1.5 1.0 2.0 2.5 3.0 maximum output power MAX2307 toc20 v gc (v) p out (dbm) acpr 53dbc alt1 -65dbc acpr > -53dbc alt1 > -65dbc typical operating characteristics (continued) (MAX2307 evaluation kit, v cc = +2.8v, v gc = 2.2v, v shdn = v shdnlo = v cc , f rf = 906mhz, f if = 165mhz, f lo = 741mhz, t a = +25 c, unless otherwise noted.) -20.0 -18.5 -19.0 -17.5 -16.0 -15.0 0.5 1.5 1.0 2.0 3.0 maximum input power MAX2307 toc09 v gc (v) p in (dbm) acpr > -53dbc alt1 > -65dbc -15.5 -16.5 -17.0 -18.0 -19.5 2.5 acpr -53dbc alt1 -65dbc
MAX2307 low-power cellular upconverter-driver _______________________________________________________________________________________ 7 applications information local oscillator loin/ shdnlo input the lo input is a single-ended broadband port. the lo signal is mixed with the input if signal and the resulting upconverted output appears on the rfout pin. ac-couple the lo pin with a capacitor having less than 3 ? reactance at the lo frequency. this device also contains an internal lo buffer and supports an lo signal ranging from -15dbm to -5dbm. shdnlo turns the lo buffer on and off independent of the rest of the ic and shares the same pin as loin. to avoid loading of the lo, connect a 10k ? isolation resis- tor between the loin/ shdnlo pin and the shdnlo logic output. the shdnlo control can help reduce vco pulling in gated-transmission mode by providing a means to keep the lo buffer on while the upconverter and driver turn on and off. if input the MAX2307 has a differential if input port for inter- facing to differential if filters. ac-couple the if pins with a capacitor. the typical if input frequency is 165mhz, but device can operate from 130mhz to 230mhz. the differential impedance between the two if inputs is approximately 400 ? in parallel with 0.5pf. mixer the MAX2307 uses a double-balanced differential upconverting mixer. two inductors connecting the mixer output pins (a2 and a3) to v cc in conjunction with an on-chip capacitor achieve image suppression. this method allows image rejection with no current con- sumption penalty, and permits much higher q than using on-chip inductors to ensure sufficient selectivity for image rejection. the q of the off-chip tank inductor directly determines the image suppression level and usable bandwidth. the MAX2307 also provides a continuous variable gain function, enabling at least 20db of gain control using an external control voltage input. pa driver the MAX2307 utilizes a class ab driver stage. unlike class a or b, class ab action offers both good linearity and low current consumption. current consumption of class ab is proportional to the output power at high drive levels. rfout is an open-collector output that requires an external inductor to v cc for proper biasing. for opti- mum performance, implement an impedance-matching network. the configuration and values for the matching network depend on the transmit frequency, perfor- mance, and desired output impedance. for simultane- ous optimum linearity and return loss, the real part of the load impedance should be about 100 ? . the device s internal 0.5pf shunt parasitic needs to be absorbed by the matching network. for matching net- work values for the japanese cellular transmit band, see the MAX2307 ev kit data sheet. layout issues for best performance, pay close attention to power- supply issues, as well as to the layout of the rfout matching network. the ev kit can be used as a layout example. ground connections and supply bypassing are the most important. power supply and shdn _ bypassing bypass v cc with a 100pf capacitor in parallel with a 0.01f rf capacitor. use separate vias to the ground plane for each of the bypass capacitors and minimize trace length to reduce inductance. use three separate vias to the ground plane for each ground pin. power-supply layout to minimize coupling between different sections of the ic, the ideal power-supply layout is a star configuration with a large decoupling capacitor at a central v cc node. the v cc traces branch out from this central node, each going to a separate v cc node in the pc board. at the end of each trace is a bypass capacitor with low esr at the rf frequency of operation. this arrangement provides local decoupling at each v cc pin. at high frequencies, any signal leaking out of one supply pin sees a relatively high impedance (formed by the v cc trace inductance) to the central v cc node, and an even higher impedance to any other supply pin, as vccmixp v cc v cc v cc v cc v cc v cc rfout rfout gnd gc v gc ifinp if input ifinm gnd vccmixm c3 4.7 f r1 10k ? r2 10k ? c2 0.01 f c14 0.01 f c7 0.01 f c12 0.01 f c13 100pf c6 100pf c16 3.0pf l4 6.2nh l1 5.6nh l2 5.6nh c1 100pf c4 100pf shdn shdn shdnlo loin/ shdnlo loin MAX2307 typical operating circuit
package information 12l, ucsp 4x3.eps MAX2307 low-power cellular upconverter-driver 8 _______________________________________________________________________________________ well as a low impedance to ground through the bypass capacitor. impedance-matching network layout the rfout matching network is very sensitive to lay- out-related parasitics. to minimize parasitic induc- tance, keep all traces short and place components as close as possible to the chip. to minimize parasitic capacitance, minimize the area of the plane. ____________________chip information transistor count: 693 process technology: silicon bipolar
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